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insulated gate bipolar transistor IRGP4063PBF irgp4063-epbf 1 www.irf.com 06/30/09 v ces = 600v i c = 48a, t c = 100c t sc 5 s, t j(max) = 175c v ce(on) typ. = 1.65v features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ?5 s short circuit soa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature co-efficient ? tight parameter distribution ? lead free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi g c e gate collector emitter to-247ac IRGP4063PBF to-247ad irgp4063-epbf g c e c g c e c e c g n-channel absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 96 i c @ t c = 100c continuous collector current 48 i cm pulse collector current, v ge = 15v 144 a i lm clamped inductive load current, v ge = 20v 192 a v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 330 w p d @ t c = 100c maximum power dissipation 170 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.45 c/w r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40
IRGP4063PBF/irgp4063-epbf 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 200 h, r g = 10 . this is only applied to to-247ac package. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. turn-on energy is measured using the same co-pak diode as irgp4063dpbf. calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 80a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 150 a ct6 v (br)ces / t j temperature coeff. of breakdown voltage ?0.30?v/c v ge = 0v, i c = 1ma (25c-175c) ct6 ? 1.65 2.14 i c = 48a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter saturation voltage ? 2.0 ? v i c = 48a, v ge = 15v, t j = 150c 8,9,10 ?2.05? i c = 48a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 1.4ma 8,9 v ge(th) / tj threshold voltage temp. coefficient ? -21 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) 10,11 gfe forward transconductance ? 32 ? s v ce = 50v, i c = 48a, pw = 80 s i ces collector-to-emitter leakage current ? 1.0 150 a v ge = 0v, v ce = 600v ? 450 1000 v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 95 140 i c = 48a 18 q ge gate-to-emitter charge (turn-on) ? 28 42 nc v ge = 15v ct1 q gc gate-to-collector charge (turn-on) ? 35 53 v cc = 400v e on turn-on switching loss ? 625 1141 i c = 48a, v cc = 400v, v ge = 15v ct4 e off turn-off switching loss ? 1275 1481 j r g =10 , l= 200 h, l s =150nh, t j = 25c e total total switching loss ? 1900 2622 energy losses include tail & diode reverse recovery t d(on) turn-on delay time ? 60 78 i c = 48a, v cc = 400v, v ge = 15v ct4 t r rise time ? 40 56 ns r g = 10 h, l s = 150nh, t j = 25c t d(off) turn-off delay time ? 145 176 t f fall time ? 35 46 e on turn-on switching loss ? 1625 ? i c = 48a, v cc = 400v, v ge =15v 12, 14 e off turn-off switching loss ? 1585 ? j r g =10 h, l s =150nh, t j = 175c ct4 e total total switching loss ? 3210 ? energy losses include tail & diode reverse recovery wf1, wf2 t d(on) turn-on delay time ? 55 ? i c = 48a, v cc = 400v, v ge = 15v 13, 15 t r rise time ? 45 ? ns r g = 10 , l = 200 h, l s = 150nh ct4 t d(off) turn-off delay time ? 165 ? t j = 175c wf1 t f fall time ? 45 ? wf2 c ies input capacitance ? 3025 ? pf v ge = 0v 17 c oes output capacitance ? 245 ? v cc = 30v c res reverse transfer capacitance ? 90 ? f = 1.0mhz t j = 175c, i c = 192a 4 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 10 , v ge = +15v to 0v scsoa short circuit safe operating area 5 ? ? s v cc = 400v, vp =600v 16, ct3 rg = 10 , v ge = +15v to 0v wf3 conditions
IRGP4063PBF/irgp4063-epbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 25 50 75 100 125 150 175 200 t c (c) 0 10 20 30 40 50 60 70 80 90 100 i c ( a ) 0 25 50 75 100 125 150 175 200 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc
IRGP4063PBF/irgp4063-epbf 4 www.irf.com fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 8 - typical v ce vs. v ge t j = -40c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 9 - typical v ce vs. v ge t j = 25c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 10 - typical v ce vs. v ge t j = 175c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 11 - typ. transfer characteristics v ce = 50v; tp = 10 s 0 5 10 15 v ge (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) t j = 25c t j = 175c fig. 12 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v 0 50 100 150 i c (a) 0 1000 2000 3000 4000 5000 6000 e n e r g y ( j ) e off e on
IRGP4063PBF/irgp4063-epbf www.irf.com 5 fig. 14 - typ. energy loss vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 48a; v ge = 15v 0 25 50 75 100 125 rg ( ) 1000 1500 2000 2500 3000 3500 4000 4500 5000 e n e r g y ( j ) e off e on fig. 13 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 15 - typ. switching time vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 48a; v ge = 15v 0 25 50 75 100 125 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 16 - v ge vs. short circuit time v cc = 400v; t c = 25c 8 1012141618 v ge (v) 4 6 8 10 12 14 16 18 t i m e ( s ) 50 100 150 200 250 300 350 400 c u r r e n t ( a ) fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 18 - typical gate charge vs. v ge i ce = 48a; l = 600 h 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 255075100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v
IRGP4063PBF/irgp4063-epbf 6 www.irf.com fig 19. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 0.020330 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri
IRGP4063PBF/irgp4063-epbf www.irf.com 7 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit dc 4x dut vcc scsoa fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v
IRGP4063PBF/irgp4063-epbf 8 www.irf.com fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 -100 0 100 200 300 400 500 600 700 -0.40 0.10 0.60 1.10 time(s) v ce (v) -20 0 20 40 60 80 100 120 140 e off loss 5% v ce 5% i ce 90% i ce tf -100 0 100 200 300 400 500 600 6.20 6.40 6.60 6.80 7.00 time (s) v ce (v) -20 0 20 40 60 80 100 120 e on test curre 90% test 10% test 5% v ce tr fig. wf3 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 time (s) v ce (v) -100 0 100 200 300 400 500 600 i ce (a) v ce i ce
IRGP4063PBF/irgp4063-epbf www.irf.com 9

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IRGP4063PBF/irgp4063-epbf 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/09 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.

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to-247ad package is not recommended for surface mount application.

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